NCE80H16 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =80V,ID =160A RDS(ON) <4.7mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good sta.
General Features
* VDS =80V,ID =160A RDS(ON) <4.7mΩ @ VGS=10V
* High density cell design for ultra low Rdson <.
Image gallery
Download