Datasheet Details
| Part number | NCE80H11 |
|---|---|
| Manufacturer | NCE Power |
| File Size | 395.28 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE80H11 Datasheet
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Description
The NCE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Features
- VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized Avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability.