NCE8050A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =80V,ID =50A RDS(ON) < 16mΩ @ VGS=10V
(Typ:13mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =80V,ID =50A RDS(ON) < 16mΩ @ VGS=10V
(Typ:13mΩ)
* High density cell design for ultra.
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