NCE8098 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =80V,ID =98A RDS(ON) < 7.5mΩ @ VGS=10V
(Typ:6mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
GENERAL FEATURES
* VDS =80V,ID =98A RDS(ON) < 7.5mΩ @ VGS=10V
(Typ:6mΩ)
* High density cell design for ultra.
The NCE8098 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =80V,ID =98A RDS(ON) < 7.5mΩ @ VGS=10V
(Typ:6mΩ)
* High dens.
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