NCE2321A mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -4.5A RDS(ON) <70mΩ @ VGS=-1.8V RDS(ON) <50mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V
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S Schematic diagram
* High power and current handing .
General Features
* VDS = -20V,ID = -4.5A RDS(ON) <70mΩ @ VGS=-1.8V RDS(ON) <50mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-.
The NCE2321A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -20V,ID .
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