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NCE2301D Datasheet, NCE Power Semiconductor

NCE2301D mosfet equivalent, p-channel enhancement mode power mosfet.

NCE2301D Avg. rating / M : 1.0 rating-11

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NCE2301D Datasheet

Features and benefits


* VDS = -20V,ID = -2 A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram
* High power and current handing capability
* Lead fr.

Application

General Features
* VDS = -20V,ID = -2 A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic di.

Description

The NCE2301D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features
* VDS = -20V,ID .

Image gallery

NCE2301D Page 1 NCE2301D Page 2 NCE2301D Page 3

TAGS

NCE2301D
P-Channel
Enhancement
Mode
Power
MOSFET
NCE2301
NCE2301A
NCE2301B
NCE Power Semiconductor

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