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NCE2301B Datasheet, NCE Power Semiconductor

NCE2301B mosfet equivalent, p-channel enhancement mode power mosfet.

NCE2301B Avg. rating / M : 1.0 rating-12

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NCE2301B Datasheet

Features and benefits


* VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram
* High power and current handing capability
* Lead f.

Application

General Features
* VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic d.

Description

The NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features
* VDS = -20V,ID .

Image gallery

NCE2301B Page 1 NCE2301B Page 2 NCE2301B Page 3

TAGS

NCE2301B
P-Channel
Enhancement
Mode
Power
MOSFET
NCE2301
NCE2301A
NCE2301C
NCE Power Semiconductor

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