Datasheet Details
| Part number | NCE2301B |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 291.14 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE2301B Datasheet
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Description
The NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch or in PWM applications.
Features
- VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package Marking and pin assignment.