NCE2301E mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID =-2.6A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free p.
.It is ESD protested.
General Features
* VDS = -20V,ID =-2.6A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4..
The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Feature.
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