NCE2321 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V
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S Schematic diagram
* High power and current handing capability
* Lead free.
General Features
* VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V
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S Schematic diag.
The NCE2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -20V,ID =.
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