NCE20P85G mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-20V,ID =-85A RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volt.
General Features
* VDS =-20V,ID =-85A RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2.5V
* High density cel.
The NCE20P85G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-20V,ID =-85A RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-.
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