NCE20PK0402J mosfet equivalent, p-channel enhancement mode power mosfet.
MOSFET
* VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160mΩ @ VGS=-1.8V
Schottky Diode
* VKA(V) = 20V, IF = 2A, VF<0.45V@0.
General Features
MOSFET
* VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160.
The NCE20PK0402J uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
General Features
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