NCE20P45Q mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V
* High density cell design for ultra low Rdson
* Fully cha.
General Features
* VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1..
The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2..
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