NCE20P70G mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-20V,ID =-70A RDS(ON) < 3mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2.5V RDS(ON) < 8mΩ @ VGS=-1.8V
* High density cell design for ultra low Rdson
* Fully char.
General Features
* VDS =-20V,ID =-70A RDS(ON) < 3mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2.5V RDS(ON) < 8mΩ @ VGS=-1.8.
The NCE20P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-20V,ID =-70A RDS(ON) < 3mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2..
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