RA30H0608M module equivalent, 30-watt rf mosfet amplifier module.
* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
1
4 5
TENTATIVE
1 3 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control Drain Voltage (VDD), B.
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