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RA30H4452M

Manufacturer: Mitsubishi Electric

RA30H4452M datasheet by Mitsubishi Electric.

RA30H4452M datasheet preview

RA30H4452M Datasheet Details

Part number RA30H4452M
Datasheet RA30H4452M_MitsubishiElectricSemiconductor.pdf
File Size 63.19 KB
Manufacturer Mitsubishi Electric
Description 30-watt RF MOSFET Amplifier Module
RA30H4452M page 2 RA30H4452M page 3

RA30H4452M Overview

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.

RA30H4452M Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
  • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
  • Broadband Frequency Range: 440-520MHz
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V
  • 66 x 21 x 9.8 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
  • packed without desiccator)
  • Frequency Range Output Power Total Efficiency 2

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