RA30H4452M - 30-watt RF MOSFET Amplifier Module

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	RA30H4452M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	63.19 KB
Description	30-watt RF MOSFET Amplifier Module
Datasheet	RA30H4452M_MitsubishiElectricSemiconductor.pdf

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 440-520MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
66 x 21 x 9.8 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain.

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Published: Apr 16, 2005 |