Datasheet4U Logo Datasheet4U.com

RA30H4452M - 30-watt RF MOSFET Amplifier Module

Description

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
  • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
  • Broadband Frequency Range: 440-520MHz.
  • Low-Power Control Current IGG=1mA (typ) at VGG=5V.
  • 66 x 21 x 9.8 mm.
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain.

📥 Download Datasheet

Datasheet preview – RA30H4452M

Datasheet Details

Part number RA30H4452M
Manufacturer Mitsubishi Electric
File Size 63.19 KB
Description 30-watt RF MOSFET Amplifier Module
Datasheet download datasheet RA30H4452M Datasheet
Additional preview pages of the RA30H4452M datasheet.

📁 Similar Datasheet

Other Datasheets by Mitsubishi Electric Semiconductor

Full PDF Text Transcription

Click to expand full text
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum).
Published: |