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RA30H3340M Datasheet, Mitsubishi Electric

RA30H3340M modules equivalent, silicon rf power modules.

RA30H3340M Avg. rating / M : 1.0 rating-11

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RA30H3340M Datasheet

Features and benefits


* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 330-400MHz

Image gallery

RA30H3340M Page 1 RA30H3340M Page 2 RA30H3340M Page 3

TAGS
RA30H3340M
Silicon
Power
Modules
RA30H0608M
RA30H1317M
RA30H1317M1
Mitsubishi Electric
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