RA30H3340M modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) * Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 330-400MHz
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