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RA30H4452M1A - Silicon RF Power Modules

General Description

The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Key Features

  • Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V).
  • Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW.
  • Broadband Frequency Range: 440-520MHz.
  • High speed Output rise/fall time. Ton.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< Silicon RF Power Modules > RA30H4452M1A RoHS Compliance, 440-520MHz 30W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. At V GG1=3.4V, VGG2=5V, the typical gate currents are 1mA. This module is designed for TDMA, therefore this module separated the gate terminal of each MOSFET to make Ton/Toff time rapid. BLOCK DIAGRAM 2 1 3 4 5 FEATURES • Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V) • Pout>30W, T>40% @ VDD=12.5V, VGG1=3.