RA30H4452M1A modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET
(IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V)
* Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW
* Broadband Frequency Range: 440-52.
The RA30H4452M1A is a 30-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of TDMA that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output .
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