RA30H4452M1A modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V) * Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50mW * Broadband Frequency Range: 440-52.
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