RA30H1317M1 modules equivalent, silicon rf power modules.
* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain c.
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