MBQ50T65FESC datasheet, igbt equivalent, MagnaChip

Features and benefits

* High Speed Switching & Low Power Loss
* VCE(sat) = 1.85V @ IC = 50A
* Eoff = 0.55mJ @ TC = 25°C
* High Input Impedance
* trr = 80ns (typ.) @diF/dt .

Application

TO-247 MBQ50T65FESC 650V Field Stop IGBT Features
* High Speed Switching & Low Power Loss
* VCE(sat) = 1.85V.

Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ50T65FESC 650V Field Stop IGBT Features .

Image gallery