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MBQ40T65FESC - IGBT

Description

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality.

This device is for PFC, UPS & Inverter applications.

Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.95V @ IC = 40A.
  • Eoff = 0.3mJ @ TC = 25°C.
  • High Input Impedance.
  • trr = 80ns (typ. ) @diF/dt = 1000A/ μs.
  • Maximum junction temperature 175°C.

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Datasheet Details

Part number MBQ40T65FESC
Manufacturer MagnaChip
File Size 1.84 MB
Description IGBT
Datasheet download datasheet MBQ40T65FESC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBQ40T65FESC 650V Field Stop IGBT General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ40T65FESC 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.95V @ IC = 40A  Eoff = 0.3mJ @ TC = 25°C  High Input Impedance  trr = 80ns (typ.
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