MBQ40T65FESC datasheet, igbt equivalent, MagnaChip

Features and benefits

* High Speed Switching & Low Power Loss
* VCE(sat) = 1.95V @ IC = 40A
* Eoff = 0.3mJ @ TC = 25°C
* High Input Impedance
* trr = 80ns (typ.) @diF/dt =.

Application

TO-247 MBQ40T65FESC 650V Field Stop IGBT Features
* High Speed Switching & Low Power Loss
* VCE(sat) = 1.95V.

Description

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. TO-247 MBQ40T65FESC 650V Field Stop IGBT Features .

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