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MBQ40T120QESTH - IGBT

General Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.

This device is for PFC, UPS & Inverter applications.

Welder

Key Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 2.1V @ IC = 40A.
  • High Input Impedance.
  • trr = 285ns (typ. ).
  • Ultra-Soft, fast recovery anti-parallel diode.
  • Ultra-narrowed VF distribution control.
  • Positive Temperature coefficient for easy paralleling TO-247.
  • G : Gate.
  • C : Collector.
  • E : Emitter GC E Absolute Maximum Ratings Package outline and symbol Characteristics Collector-emitter voltage Gate-emitter voltage DC collector current, limited.

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Datasheet Details

Part number MBQ40T120QESTH
Manufacturer MagnaChip
File Size 834.50 KB
Description IGBT
Datasheet download datasheet MBQ40T120QESTH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBQ40T120QESTH High Speed 1200V Field Stop Trench IGBT MBQ40T120QESTH High speed FieldStop Trench IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Applications  Welder Features  High Speed Switching & Low Power Loss  VCE(sat) = 2.1V @ IC = 40A  High Input Impedance  trr = 285ns (typ.