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MBQ40T120FES - High speed FieldStop Trench IGBT

General Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.

This device is for PFC, UPS & Inverter applications.

PFC UPS Inverter

Key Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 2.0V @ IC = 40A.
  • High Input Impedance.
  • trr = 100ns (typ. ).
  • Ultra Soft, fast recovery anti-parallel diode.
  • Ultra narrowed VF distribution control.
  • Positive Temperature coefficient for easy paralleling TO-247 GCE Absolute Maximum Ratings Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Pulsed collector current, pulse time limited by Tjmax Diode forward current @ TC = 100°C Diod.

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Datasheet Details

Part number MBQ40T120FES
Manufacturer MagnaChip
File Size 1.35 MB
Description High speed FieldStop Trench IGBT
Datasheet download datasheet MBQ40T120FES Datasheet

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Full PDF Text Transcription (Reference)

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MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet MBQ40T120FES High speed FieldStop Trench IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications. Applications  PFC  UPS  Inverter Features  High Speed Switching & Low Power Loss  VCE(sat) = 2.0V @ IC = 40A  High Input Impedance  trr = 100ns (typ.