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MBQ40T65QES - IGBT

General Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality.

Key Features

  • High Speed Switching & Low Power Loss.
  • VCE(sat) = 1.8V @ IC = 40A.
  • Maximum junction temperature 175°C.

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Datasheet Details

Part number MBQ40T65QES
Manufacturer MagnaChip
File Size 711.85 KB
Description IGBT
Datasheet download datasheet MBQ40T65QES Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBQ40T65QES 650V Field Stop IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality. MBQ40T65QES 650V Field Stop IGBT Features  High Speed Switching & Low Power Loss  VCE(sat) = 1.