MBQ60T65PES Datasheet High Speed Fieldstop Trench IGBT

Manufacturer: MagnaChip

Overview: MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation.

Datasheet Details

Part number	MBQ60T65PES
Manufacturer	MagnaChip
File Size	729.89 KB
Description	High Speed Fieldstop Trench IGBT
Datasheet	MBQ60T65PES-MagnaChip.pdf

General Description

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential

Key Features

High Speed Switching & Low Power Loss.
VCE(sat) = 1.85V @ IC = 60A.
Eoff = 0.53mJ @ TC = 25°C.
High Input Impedance.
trr = 110ns (typ. ) @diF/dt = 500A/ μs.
Maximum Junction Temperature 175°C.

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