* High Speed Switching & Low VCE(sat) Loss
* VCE(sat) = 2.0V @IC = 25A
* High Input Impedance
* trr = 100ns (typ.) @ diF/dt = 500A/ μs
* Maximum junct.

Applications
* PFC
* UPS
* Welder
* PV Inverter Features
* High Speed Switching & Low VCE(sat) L.

This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & PV inverter and Welder Applications. Applications
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