MBQ40T65FDSC igbt equivalent, 650v field stop igbt.
* High Speed Switching & Low Power Loss
* VCE(sat) = 1.95V @ IC = 40A
* Eoff = 0.35mJ @ TC = 25°C
* High Input Impedance
* trr = 80ns (typ.) @diF/dt .
TO-247
MBQ40T65FDSC
650V Field Stop IGBT
Features
* High Speed Switching & Low Power Loss
* VCE(sat) = 1.95V.
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications.
TO-247
MBQ40T65FDSC
650V Field Stop IGBT
Features
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