PTVA120501EA fet equivalent, 50w high power rf ldmos fet.
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance an.
in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange..
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this .
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