PTVA127002EV fet equivalent, thermally-enhanced high power rf ldmos fet.
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perfor.
in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange..
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS proces.
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