PTVA120251EA fet equivalent, 25w high power rf ldmos fet.
include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance .
in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down fl.
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 836.28KB)