PTVA123501EC fets equivalent, thermally-enhanced high power rf ldmos fets.
include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent th.
in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and e.
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured wit.
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