PTVA120251EA fet equivalent, thermally-enhanced high power rf ldmos fet.
include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perf.
in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down fl.
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS p.
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