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IRG7PH42UD1MPBF Datasheet, International Rectifier

IRG7PH42UD1MPBF transistor equivalent, insulated gate bipolar transistor.

IRG7PH42UD1MPBF Avg. rating / M : 1.0 rating-12

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IRG7PH42UD1MPBF Datasheet

Features and benefits


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* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transien.

Application

Features
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* Low VCE (ON) trench IGBT technology Low switching losses.

Image gallery

IRG7PH42UD1MPBF Page 1 IRG7PH42UD1MPBF Page 2 IRG7PH42UD1MPBF Page 3

TAGS
IRG7PH42UD1MPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PH42UD1-EP
IRG7PH42UD1PbF
IRG7PH42UD-EP
International Rectifier
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