IRG7PH42UD1MPBF
IRG7PH42UD1MPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
IRG7PH42UD1MPb F
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
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- Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package
VCES = 1200V IC = 45A, TC = 100°C
TJ(max) = 150°C VCE(on) typ. = 1.7V @IC= 30A n-channel
Benefits
- Device optimized for induction heating and soft switching applications
- High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation
- Low EMI
G Gate
Base part number IRG7PH42UD1MPb F Package Type TO-247AD Form Tube Standard Pack Quantity 25
TO-247AD
C Collector
E Emitter
Orderable Part Number IRG7PH42UD1MPb...
