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IRG7PH35UDPbF Datasheet, International Rectifier

IRG7PH35UDPbF transistor equivalent, insulated gate bipolar transistor.

IRG7PH35UDPbF Avg. rating / M : 1.0 rating-11

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IRG7PH35UDPbF Datasheet

Features and benefits


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* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON).

Application


* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged trans.

Image gallery

IRG7PH35UDPbF Page 1 IRG7PH35UDPbF Page 2 IRG7PH35UDPbF Page 3

TAGS

IRG7PH35UDPbF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PH35UD-EP
IRG7PH35UD1-EP
IRG7PH35UD1MPBF
International Rectifier

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