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IRG7PH35UD-EP Datasheet, International Rectifier

IRG7PH35UD-EP transistor equivalent, insulated gate bipolar transistor.

IRG7PH35UD-EP Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 492.67KB)

IRG7PH35UD-EP Datasheet
IRG7PH35UD-EP Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 492.67KB)

IRG7PH35UD-EP Datasheet

Features and benefits


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* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON).

Application


* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged trans.

Image gallery

IRG7PH35UD-EP Page 1 IRG7PH35UD-EP Page 2 IRG7PH35UD-EP Page 3

TAGS

IRG7PH35UD-EP
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

Manufacturer


International Rectifier

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