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IRG7PH35UD1MPBF Datasheet, International Rectifier

IRG7PH35UD1MPBF transistor equivalent, insulated gate bipolar transistor.

IRG7PH35UD1MPBF Avg. rating / M : 1.0 rating-11

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IRG7PH35UD1MPBF Datasheet

Features and benefits


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* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transien.

Application

Features
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* Low VCE (ON) trench IGBT Technology Low Switching Losses.

Image gallery

IRG7PH35UD1MPBF Page 1 IRG7PH35UD1MPBF Page 2 IRG7PH35UD1MPBF Page 3

TAGS

IRG7PH35UD1MPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PH35UD1-EP
IRG7PH35UD1PbF
IRG7PH35UD-EP
International Rectifier

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