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IRG7PH35UD1PbF Datasheet, International Rectifier

IRG7PH35UD1PbF transistor equivalent, insulated gate bipolar transistor.

IRG7PH35UD1PbF Avg. rating / M : 1.0 rating-11

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IRG7PH35UD1PbF Datasheet

Features and benefits


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* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transien.

Application

IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features
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Image gallery

IRG7PH35UD1PbF Page 1 IRG7PH35UD1PbF Page 2 IRG7PH35UD1PbF Page 3

TAGS

IRG7PH35UD1PbF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PH35UD1-EP
IRG7PH35UD1MPBF
IRG7PH35UD-EP
International Rectifier

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