IRG7PH35UD1PbF transistor equivalent, insulated gate bipolar transistor.
*
*
*
*
*
*
*
*
* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transien.
IRG7PH35UD1PbF IRG7PH35UD1-EP
VCES = 1200V I NOMINAL = 20A
Features
*
*
*
*
*
*
*
*
Image gallery
TAGS