IRG7PH35UD1-EP datasheet, transistor equivalent, International Rectifier

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Features and benefits

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* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transien.

IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features
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IRG7PH35UD1-EP

Manufacturer

International Rectifier

Related datasheet

IRG7PH35UD1MPBF