IRF6811STRPBF mosfet equivalent, power mosfet.
Tj = 150°C 1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V)
0.1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS =.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is .
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