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IRF6810STR1PBF - Power MOSFET

Download the IRF6810STR1PBF datasheet PDF. This datasheet also covers the IRF6810STRPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 220 EAS , Single Pulse Avalanche Energy (mJ) 200 180 160 140 120 100 80 60 40 20 0 25 50 75 ID TOP 1.6A 2.4A BOTTOM 13A 100 Typical VGS(th) Gate th.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6810STRPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6894MPbF Power MOSFET Infineon
IRF6894MTRPbF Power MOSFET Infineon
IRF6898M Power MOSFET Infineon
IRF6898MPbF Power MOSFET Infineon
IRF6898MTRPbF Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6810STRPBF Power MOSFET
IRF6811SPBF Power MOSFET
IRF6811STRPBF Power MOSFET
IRF6802SDPBF Power MOSFET
IRF6802SDTRPBF Power MOSFET

Full PDF Text Transcription

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PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values (unless otherwise specified) Low Profile (<0.7 mm) Dual Sided Cooling Compatible  VDSS VGS RDS(on) RDS(on) Ultra Low Package Inductance 25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for Control FET Application 7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.
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