ut Characteristics 1.6 ID = 16A V GS = 10V V GS = 4.5V ID, Drain-to-Source Current (A) 100 Typical RDS(on) (Normalized) T J = 150°C T J = 25°C T J = -40°C 1.4 1.2 .

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is c.

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