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IRF6811STRPBF - Power MOSFET

Download the IRF6811STRPBF datasheet PDF. This datasheet also covers the IRF6811SPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • e-to-Drain Voltage (V) 0.1 Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A ID, Drain Current (A) Fig 12. Maximum Drai.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6811SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6894MPbF Power MOSFET Infineon
IRF6894MTRPbF Power MOSFET Infineon
IRF6898M Power MOSFET Infineon
IRF6898MPbF Power MOSFET Infineon
IRF6898MTRPbF Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6811SPBF Power MOSFET
IRF6810STR1PBF Power MOSFET
IRF6810STRPBF Power MOSFET
IRF6802SDPBF Power MOSFET
IRF6802SDTRPBF Power MOSFET

Full PDF Text Transcription

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PD-97634 l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested Footprint compatible to DirectFET Typical values (unless otherwise specified) DirectFET®plus Power MOSFET ‚ VGS RDS(on) Qgs2 1.4nC IRF6811SPbF IRF6811STRPbF RDS(on) Qoss 11nC VDSS Qg tot 25V max ±16V max 2.8mΩ @ 10V 4.1mΩ @ 4.5V Qgd 4.2nC Qrr 23nC Vgs(th) 1.6V 11nC D G S D SQ Applicable DirectFET Outline and Substrate Outline (see p.
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