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IRF6802SDTRPBF - Power MOSFET

Download the IRF6802SDTRPBF datasheet PDF. This datasheet also covers the IRF6802SDPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • ) 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 35μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 300 EAS , Single Puls.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6802SDPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 3.2m@ 10V 4.5m@ 4.5V l Dual Sided Cooling Compatible  l Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching  8.8nC 3.1nC 1.1nC 22nC 13nC 1.6V l Ideal for CPU Core DC-DC Converters l Optimized for Control FET socket of Sync. Buck Converter l Low Conduction and Switching Losses G G D D l Compatible with existing Surface Mount Techniques  S S l 100% Rg tested l PD - 97769 DirectFET®plus Power MOSFET ‚ SA Applicable DirectFET Outline and Substrate Outline (see p.
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