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IRF6892STRPBF - Power MOSFET

Description

The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

Features

  • °C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 140 120 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 1.0mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1000 EAS , Single Pulse Avalanche Energy (mJ) F.

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Other Datasheets by International Rectifier (now Infineon)

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IRF6892STR1PBF Power MOSFET
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Full PDF Text Transcription

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IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l PD - 97770 RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested DirectFET®plus MOSFET with Schottky Diode ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.0nC RDS(on) Qgs2 2.3nC RDS(on) Qoss 16nC 25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V Qrr 39nC Vgs(th) 1.
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