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IRF6892STR1PBF - Power MOSFET

Download the IRF6892STR1PBF datasheet PDF. This datasheet also covers the IRF6892STRPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.

Features

  • °C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 140 120 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 1.0mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1000 EAS , Single Pulse Avalanche Energy (mJ) F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6892STRPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6894MPbF Power MOSFET Infineon
IRF6894MTRPbF Power MOSFET Infineon
IRF6898M Power MOSFET Infineon
IRF6898MPbF Power MOSFET Infineon
IRF6898MTRPbF Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6892STRPBF Power MOSFET
IRF6893MPbF MOSFET
IRF6893MTRPbF MOSFET
IRF6894MPBF Power MOSFET
IRF6894MTRPBF Power MOSFET

Full PDF Text Transcription

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IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l PD - 97770 RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested DirectFET®plus MOSFET with Schottky Diode ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.0nC RDS(on) Qgs2 2.3nC RDS(on) Qoss 16nC 25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V Qrr 39nC Vgs(th) 1.
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