IRF6810STRPBF mosfet equivalent, power mosfet.
ut Characteristics
1.6 ID = 16A V GS = 10V V GS = 4.5V
ID, Drain-to-Source Current (A)
100
Typical RDS(on) (Normalized)
T J = 150°C T J = 25°C T J = -40°C
1.4
1.2
.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is c.
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