AUIRF7478Q mosfet equivalent, power mosfet.
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HEXFET® Power MOSFET
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Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching .
this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per.
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.
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