l l l l l l l l l AUIRF7416Q HEXFET® Power MOSFET S 1 2 3 4 8 7 Advanced Process Technology Low On-Resistance P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temp.

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

AUIRF7478Q

AUIRF7484Q

AUIRF7103Q

AUIRF7207Q

AUIRF7303Q

AUIRF7304Q

AUIRF7309Q

AUIRF7313Q

AUIRF7316Q

AUIRF7319Q

AUIRF7341Q

AUIRF7342Q

AUIRF7343Q

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