AUIRF7207Q mosfet equivalent, power mosfet.
*Advanced Process Technology
*Low On-Resistance
*Logic Level Gate Drive
*P-Channel MOSFET
*Dynamic dV/dT Rating
*150°C Operating Temperatur.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
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