l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, RoHS Compliant.

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.

AUIRF7207Q

AUIRF7303Q

AUIRF7304Q

AUIRF7309Q

AUIRF7313Q

AUIRF7316Q

AUIRF7319Q

AUIRF7341Q

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AUIRF7343Q

AUIRF7379Q

AUIRF7416Q

AUIRF7478Q

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