AUIRF7103Q Datasheet Dual N-Channel MOSFET

Manufacturer: Infineon

AUIRF7103Q dual n-channel mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	AUIRF7103Q
Manufacturer	Infineon
File Size	420.70 KB
Description	Dual N-Channel MOSFET
Download	AUIRF7103Q Download (PDF)

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

SO-8 AUIRF7103Q G Gate D Drain 50V 130m 3.0A S Source Base part number AUIRF7103Q Package Type SO-8 Standard Pack Form

Overview

AUTOMOTIVE GRADE AUIRF7103Q.

Key Features

Advanced Planar Technology.
Dual N Channel MOSFET.
Low On-Resistance.
Logic Level Gate Drive.
Dynamic dv/dt Rating.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) max. ID.

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