AUIRF7103Q mosfet equivalent, dual n-channel mosfet.
* Advanced Planar Technology
* Dual N Channel MOSFET
* Low On-Resistance
* Logic Level Gate Drive
* Dynamic dv/dt Rating
* 175°C Operating Tempera.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 420.70KB)