ITCH36015E2 - RF Power LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH36015E2
Manufacturer	Innogration
File Size	931.12 KB
Description	RF Power LDMOS FET
Datasheet	ITCH36015E2 Datasheet
Additional preview pages of the ITCH36015E2 datasheet.

Product details

Description

The ITCH36015E2 is a 20-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 3600 MHz ITCH36015E2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 120 mA，Pulse Width =20us, Duty Cycle =10%.Frequency GMAX P_1dB P_3dB ηD (MHz) (dB) (dBm) (dBm) (%) Pavg=33dBm WCDMA Signal(1) Gp ηD ACPR_5M (dB) (%) (dBc) 869 22.9 43.7 44.2 64.1 22.6 21.6 -37.1 881.5 22.9

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS +65 Vdc VGS -10 to +10 Vdc 1/5 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH36015E2 Preli.

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Published: Aug 5, 2018 |